Physics of Semiconductors

Period of duration of course
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Course info
Number of course hours
40
Number of hours of lecturers of reference
40
Number of hours of supplementary teaching
0
CFU 6
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Type of exam

Oral exam

Prerequisites

Band structure of solids, fundamentals of radiation-matter interaction. Recommended for Masters students.

Programme

A.  Bulk Semiconductors

Electronic states and energy bands in bulk semiconductors: single-band approximation, envelope function approximation, effective mass approximation. Multiband envelope function approximation: Luttinger-Kohn hamiltonian. Carrier statistics at equilibrium. Electron transport, semiclassical dynamics. Bloch oscillator. Zener effect. Optical properties: interband transitions and joint density of states. Electron mobility: charged impurity scattering, electron-phonon interaction, temperature dependence.

B. 2D Heterostructures and materials

Semiconductor heterostructures: growth and fabrication, band alignment. Electronic states and carrier statistics in superlattices and quantum wells. Electron transport in superlattices and multiple quantum wells (intra- and inter-band). Resonant tunneling diodes. Two-dimensional electron gases: modulation doping and electron mobiity, graphene and other 2D materials. Quantum Hall effects, anomalous Hall effect in graphene.

Optical properties of heterostructures: intraband and interband matrix elements. Quantum-well lasers, quantum-cascade lasers. Photonic crystals, quasi-crystals and random strutures. 2D radiation detectors.

Educational aims

Electronic properties of semiconductors and their heterostructures. Introduction to current research activities in the field of semiconductor heterostructures and two dimensional materials.

Bibliographical references

J.M. Ziman, Theory of solids, Cambridge University Press

P.Y. Yu and M. Cardona, Fundamentals of Semiconductors, Springer

S. Datta, Quantum Phenomena. Addison Wesley

J. Faist, Quantum Cascade Lasers, Oxford University Press