Examination procedure
<p>Seminar and oral on topics of the course</p>
Examination procedure notes
<p>The student will first present a seminar on a paper selected by the professors and then oral exam will take place on topics presented in the course. Questions will be make to verify the comprehension level of the student.</p>
Prerequisites
Solid State Physics, Semiconductor Physics
Syllabus
- Growth techniques (bulk, epitaxial: CVD, MOCVD, MBE, CBE)
- Fabrication techniques of nanostructures: topdown and bottom-up
- Morphological properties of nanostructures (AFM, SEM, STM)
- Electronic, chemical and compositional properties of nanostructures (Photoemission, XPS,PEEM, XPEEM, SPEM)
- Structural properties of nanostructures (TEM, XRD)
- Optical properties of nanostructures (PL, PLE, Raman)
- Low-temperature magneto-transport
- Materials (2DEG, Graphene, bP, NWs, QDs)
- Examples (quantum Hall effect, hydrogen storage)
Bibliographical references
- Jeffrey Y. Tsao: Materials Fundamentals of Molecular Beam Epitaxy, 1992
- Ivan V. Markov: Crystal Growth for Beginners: Fundamentals of Nucleation, Crystal Growth, andEpitaxy, 2004
- Terry L. Alford, Leonard C. Feldman, James W. Mayer: Fundamentals of Nanoscale FilmAnalysis, Springer, 2007
- Carlo Lamberti: Characterization of semiconductor heterostructures and nanostructures, Elsevier,2008
- Mohamed Henini: Molecular Beam Epitaxy, Elsevier, 2013.
- Bert Voigtländer: Scanning Probe Microscopy, Springer, 2015.